US Patent Issued to Micron Technology on Jan. 13 for "Memory devices including conductive rails, and related methods and electronic systems" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,534, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory devices including conductive rails, and related methods and electronic systems" was invented by John D. Hopkins (Meridian, Idaho), Jordan D. Greenlee (Boise, Idaho), Francois H. Fabreguette (Boise, Idaho) and John A. Smythe (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each of the tiers individually comprising a conductive structure and an insulative structure, strings of memory cells vertically extending thr...