US Patent Issued to Micron Technology on Feb. 4 for "Determine optimized read voltage via identification of distribution shape of signal and noise characteristics" (California Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,803, issued on Feb. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Determine optimized read voltage via identification of distribution shape of signal and noise characteristics" was invented by Abdelhakim S. Alhussien (San Jose, Calif.), James Fitzpatrick (Laguna Niguel, Calif.), Patrick Robert Khayat (San Diego) and Sivagnanam Parthasarathy (Carlsbad, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device to determine a voltage optimized to read a group of memory cells. In response to a command, the memory device reads the group of memory cells at a plurality of test voltages to determine a set of signal and noise characte...