US Patent Issued to Micron Technology on Feb. 4 for "Block failure protection for zone memory system" (California Inventor)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,216,541, issued on Feb. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Block failure protection for zone memory system" was invented by Sanjay Subbarao (Irvine, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments provide block failure protection for a memory sub-system that supports zones, such a memory sub-system that uses a RAIN (redundant array of independent NAND-type flash memory devices) technique for data error-correction. For some embodiments, non-parity zones of a memory sub-system that are filling up at a similar rate are matched together, a parity is generated for stored data from across the matching zones, an...