US Patent Issued to Micron Technology on Feb. 3 for "Selective cavity merging for isolation regions in a memory die" (Japanese, American, Italian Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,543, issued on Feb. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Selective cavity merging for isolation regions in a memory die" was invented by Yoshiaki Fukuzumi (Yokohama, Japan), David H. Wells (Boise, Idaho), Byeung Chul Kim (Boise, Idaho), Richard H. Hill (Boise, Idaho) and Paolo Tessariol (Arcore, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for selective cavity merging for isolation regions in a memory die are described. For example, formation of material structures of a memory die may include depositing a stack of alternating layers of a first material and a second material over a substrate ...