US Patent Issued to Micron Technology on Feb. 3 for "Redundancy and swapping scheme for memory repair" (Idaho, Georgia Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,440, issued on Feb. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Redundancy and swapping scheme for memory repair" was invented by Jaeil Kim (Suwanee, Ga.) and Simon J. Lovett (Nampa, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device can include a bank of memory cells. The bank of memory cells can include multiple groups of columns of memory cells. The memory device can include controller circuitry to provide information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups at row address strobe (RAS) time. Upon detection of an error condition in at least one group of ...