US Patent Issued to Micron Technology on Feb. 3 for "Microelectronic devices, and related memory devices, electronic systems, and methods" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,307, issued on Feb. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices, and related memory devices, electronic systems, and methods" was invented by Yuri Ishizaki (Hiroshima, Japan) and Yoshikazu Moriwaki (Hiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device, comprises a base structure comprising: active regions individually comprising semiconductor material; and isolation regions horizontally alternating with the active regions and individually comprising insulative material; epitaxial semiconductor material on the semiconductor material of one of the active regions, the epitaxial s...