US Patent Issued to Micron Technology on Feb. 3 for "Electronic structures comprising multiple, adjoining high-k dielectric materials and related electronic devices, systems, and methods" (American, Italian Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,308, issued on Feb. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Electronic structures comprising multiple, adjoining high-k dielectric materials and related electronic devices, systems, and methods" was invented by Shyam Surthi (Boise, Idaho), Chris M. Carlson (Nampa, Idaho), Richard J. Hill (Boise, Idaho) and Davide Resnati (Cinsello Balsamo, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic structure comprising stacks comprising alternating dielectric materials and conductive materials in a cell region of the electronic structure. A pillar high-k dielectric material is adjacent to the stacks and in a pillar region of...