ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,238,924, issued on Feb. 25, was assigned to Micron Technology Inc. (Boise, Idaho).
"Semiconductor device having STI region" was invented by Kunihiro Tsubomi (Higashihiroshima, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is an apparatus that includes a semiconductor substrate including first and second circuit regions a first trench extending in a first direction and formed between the first and second circuit regions, wherein the first trench includes a first inner wall positioned on the first circuit region side and a second inner van positioned on the second circuit region side, and a plurality of second trenches extending in...