US Patent Issued to Micron Technology on Feb. 18 for "Memory device having 2-transistor vertical memory cell" (Idaho Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,311, issued on Feb. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having 2-transistor vertical memory cell" was invented by Srinivas Pulugurtha (Boise, Idaho) and Durai Vishak Nirmal Ramaswamy (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell, first, second, and third data lines, and first and second access lines. Each of the first, second, and third data lines includes a length extending in a first direction. Each of the first and second access lines includes a length extending in a second...