US Patent Issued to Micron Technology on Feb. 18 for "Memory cells with sidewall and bulk regions in vertical structures" (Italian Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,432, issued on Feb. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory cells with sidewall and bulk regions in vertical structures" was invented by Lorenzo Fratin (Buccinasco, Italy), Enrico Varesi (Milan) and Paolo Fantini (Vimercate, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for techniques for memory cells with sidewall and bulk regions in vertical structures are described. A memory cell may include a first electrode, a second electrode, and a self-selecting storage element between the first electrode and the second electrode. The bulk region may extend between the first electrode and the si...