US Patent Issued to Micron Technology on Feb. 17 for "Methods used in forming a memory array comprising strings of memory cells including selectively etching sacrificial material in a memory-cell region selectively relative to insulating, insulator and/or insulative material(s) to form void spaces between conductive tiers" (Idaho Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,274, issued on Feb. 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods used in forming a memory array comprising strings of memory cells including selectively etching sacrificial material in a memory-cell region selectively relative to insulating, insulator and/or insulative material(s) to form void spaces between conductive tiers" was invented by Shyam Surthi (Boise, Idaho) and Richard J. Hill (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises a vertical stack comprising vertically-alternating insulative tiers and conductive tiers directly above a conductor tier....