US Patent Issued to Micron Technology on Feb. 11 for "Single crystalline silicon stack formation and bonding to a cmos wafer" (Idaho Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,201, issued on Feb. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Single crystalline silicon stack formation and bonding to a cmos wafer" was invented by Si-Woo Lee (Boise, Idaho) and Byung Yoon Kim (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and apparatus are provided for single crystalline silicon stack formation and bonding to a complementary metal oxide semiconductor (CMOS) wafer for formation of vertical three dimensional (3D) memory. An example method for forming arrays of vertically stacked layers for formation of memory cells includes providing a silicon substrate, forming a layer of single cr...