ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,310, issued on Feb. 11, was assigned to Micron Technology Inc. (Boise, Idaho).
"Single-crystal transistors for memory devices" was invented by Fatma Arzum Simsek-Ege (Boise, Idaho), Masihhur R. Laskar (Meridian, Idaho), Nicholas R. Tapias (Boise, Idaho), Darwin Franseda Fan (Boise, Idaho) and Manuj Nahar (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for single-crystal transistors for memory devices are described. In some examples, a cavity may be formed through at least a portion of one or more dielectric materials, which may be deposited above a deck of memory cells. The cavity may include a taper, such ...