US Patent Issued to Micron Technology on Feb. 11 for "Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays" (Idaho Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,223,994, issued on Feb. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays" was invented by Durai Vishak Nirmal Ramaswamy (Boise, Idaho) and Wayne Kinney (Emmett, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include a ferroelectric transistor. The transistor has gate dielectric material configured as a first container, with the first container having a first inner surface. Metal-containing material is configured as a second container nested within said first container. The second container has a second ...