US Patent Issued to Micron Technology on Feb. 11 for "All level coarse/fine programming of memory cells" (California, Idaho Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,012, issued on Feb. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"All level coarse/fine programming of memory cells" was invented by Lawrence Celso Miranda (San Jose, Calif.), Tomoko Ogura Iwasaki (San Jose, Calif.), Sheyang Ning (San Jose, Calif.) and Jeffrey S. McNeil (Nampa, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described are systems and methods for all level coarse/fine programming of memory cells. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines; and a controller coupled to the memory array, the cont...