US Patent Issued to Micron Technology on Dec. 9 for "Memory sub-system initiated burst scan under low power mode" (Singaporean, American Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,493,416, issued on Dec. 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory sub-system initiated burst scan under low power mode" was invented by Chao-Han Cheng (San Jose, Calif.), Lei Zhang (Bukit Timah, Singapore) and Srinivasa Reddy Kunduru (Bukit Panjang, Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wake up cadence at which the memory device is to wake up during a low power mode is determined. Based on the wake up cadence, a processing device determines a finite number of pages of the memory device to be scanned per wake up during the low power mode to satisfy a criterion for memory device qualification, the criterion bein...