US Patent Issued to Micron Technology on Dec. 9 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,251, issued on Dec. 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by Jiewei Chen (Meridian, Idaho), Jordan D. Greenlee (Boise, Idaho), Shuangqiang Luo (Boise, Idaho) and Silvia Borsari (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel material strings extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers extend from the memory-...