US Patent Issued to Micron Technology on Dec. 9 for "Compact microelectronic 6T SRAM memory devices, and related systems and methods" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,535, issued on Dec. 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Compact microelectronic 6T SRAM memory devices, and related systems and methods" was invented by Mitsunari Sukekawa (Hiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Microelectronic devices include at least one memory cell, each with six transistors collectively comprising six pillars grouped in pillar pairs and formed from a semiconductor material. Each of the pillar pairs includes a first and a second pillar. Gate electrodes are also included, with each gate electrode extending between and horizontally around a portion of the first pillar and a portion of ...