ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,138, issued on Dec. 30, was assigned to Micron Technology Inc. (Boise, Idaho).
"Dopant-modulated etching for memory devices" was invented by Innocenzo Tortorelli (Cernusco sul Naviglio, Italy) and Mattia Robustelli (Milan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices based on the use of dopant-modulated etching are described. During fabrication, a memory storage element of a memory cell may be non-uniformly doped with a dopant that affects a subsequent etching rate of the memory storage element. After etching, the memory storage element may have an asymmetric geometry or taper profile corresponding to the non-uniform doping conc...