US Patent Issued to Micron Technology on Dec. 23 for "Signal timing for a memory device with a die having multiple pseudo channels per channel" (Idaho Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,032, issued on Dec. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Signal timing for a memory device with a die having multiple pseudo channels per channel" was invented by Sujeet Ayyapureddi (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device (e.g., a high-bandwidth (HBM) memory device) that includes a memory die having multiple pseudo channels per channel is disclosed. The memory die can include first memory banks associated with a first channel (e.g., having a first command address (CA) bus) and a first pseudo channel (e.g., having a first data (DQ) bus) and second memory banks associated with the first chann...