US Patent Issued to Micron Technology on Dec. 23 for "Multiple diode reference readout circuitry of a degradation sensing circuit" (Georgia, Idaho Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,874, issued on Dec. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Multiple diode reference readout circuitry of a degradation sensing circuit" was invented by Zhi Qi Huang (Atlanta), Dong Pan (Boise, Idaho) and Scott D. Van De Graaff (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods described herein may increase voltages sensed during testing of a device-under-test, which may increase an ease of sensing by a comparator, where a relatively less sensitive comparator may be used to detect the increased voltage sensed. Indeed, readout circuitry may include two or more diodes coupled in series to a resistor, w...