US Patent Issued to Micron Technology on Dec. 23 for "Memory device producing metadata characterizing applied read voltage level with respect to voltage distributions" (California Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,888, issued on Dec. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device producing metadata characterizing applied read voltage level with respect to voltage distributions" was invented by Dung Viet Nguyen (San Jose, Calif.), Patrick R. Khayat (San Diego), Sivagnanam Parthasarathy (Carlsbad, Calif.), Zhengang Chen (San Jose, Calif.) and Dheeraj Srinivasan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described are memory devices producing metadata characterizing the applied read voltage level with respect to voltage distributions. An example memory sub-system comprises: a memory device comprising a plurality o...