US Patent Issued to Micron Technology on Dec. 23 for "Doped titanium nitride materials for dram capacitors, and related semiconductor devices" (Idaho Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,395, issued on Dec. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Doped titanium nitride materials for dram capacitors, and related semiconductor devices" was invented by Matthew N. Rocklein (Boise, Idaho), Paul A. Paduano (Nampa, Idaho), Sanket S. Kelkar (Boise, Idaho), Christopher W. Petz (Boise, Idaho), Zhe Song (Boise, Idaho), Vassil Antonov (Boise, Idaho) and Qian Tao (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capa...