US Patent Issued to Micron Technology on Dec. 2 for "Read and write address translation using reserved memory pages for multi-page translation units" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,916, issued on Dec. 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Read and write address translation using reserved memory pages for multi-page translation units" was invented by Meng Wei (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some implementations, a memory device may receive a write command that includes data to be written to multiple memory pages of a translation unit (TU) of the memory device. The multiple memory pages of the TU may span multiple memory planes of the memory device. The memory device may identify the multiple memory pages of the TU, to which the data is to be written, based on one or more bad block...