US Patent Issued to Micron Technology on Dec. 16 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,944, issued on Dec. 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Yongjun Jeff Hu (Boise, Idaho) and Pengyuan Zheng (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises a conductor tier. The conductor tier comprises upper conductor material directly above and directly against lower conductor material of different composition from that of the upper conductor material. The channel-material strings directly electrically couple to ...