ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,623, issued on Dec. 16, was assigned to Micron Technology Inc. (Boise, Idaho).
"Formation for memory cells" was invented by Giorgio Servalli (Fara Gera d'Adda, Italy), Durai Vishak Nirmal Ramaswamy (Boise, Idaho) and Marcello Mariani (Milan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for formation for memory cells are described. A semiconductor device (e.g., a memory die) may include asymmetrical rows of conductive pillars and one or more dielectric materials. For example, the memory die may include a set of conductive pillars that are arranged in rows that are asymmetrically spaced. Here, a first row of conductive p...