ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,498,856, issued on Dec. 16, was assigned to Micron Technology Inc. (Boise, Idaho).
"DRAM row copy" was invented by Yang Lu (Boise, Idaho), Yuan He (Boise, Idaho) and Kang-Yong Kim (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random access memory employs either or both of a normal row copy operation or a fast row copy operation to copy selected data from a first row of memory to a second row of memory, without transferring the data to an intermediary processor such as a central processing unit or a memory controller. Both operations depend on a concurrent electrical activation of two separate wordlines within a bank of a DRAM. F...