US Patent Issued to Micron Technology on Aug. 26 for "Semiconductor device having memory cell array divided into plural memory mats" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,730, issued on Aug. 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor device having memory cell array divided into plural memory mats" was invented by Susumu Takahashi (Kanagawa, Japan) and Hiroki Fujisawa (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus that includes a plurality of first memory mats each including a plurality of normal column sections each storing user data, and a second memory mat including a plurality of first redundant column sections each substituting a defective one of column sections included in the plurality of first memory mats and a plurality of first BCC column sections ...