US Patent Issued to Micron Technology on Aug. 26 for "Reduced pitch memory subsystem for memory device" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,956, issued on Aug. 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Reduced pitch memory subsystem for memory device" was invented by Michael A. Smith (Boise, Idaho), Haitao Liu (Boise, Idaho) and Vladimir Mikhalev (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells and a plurality of bit-lines with each bit-line connected to a respective set of memory cells of the array of memory cells. The memory device includes a memory subsystem having first and second memory circuits. Each first memory circuit can be disposed laterally adjacent to a second memory circuit. Each first memory c...