US Patent Issued to Micron Technology on Aug. 19 for "Semiconductor device and method for forming the wiring structures avoiding short circuit thereof" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,166, issued on Aug. 19, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor device and method for forming the wiring structures avoiding short circuit thereof" was invented by Hidenori Yamaguchi (Higashihiroshima, Japan), Katsumi Koge (Higashihiroshima, Japan), Junya Suzuki (Higashihiroshima, Japan) and Hiroshi Ichikawa (Higashihiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; a memory cell region over the substrate; a peripheral region over the substrate, the peripheral region being adjacent to the memory cell region; and a plurality of first and second word-lines extendi...