US Patent Issued to Micron Technology on Aug. 12 for "Low stress refresh erase in a memory device" (American, Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,795, issued on Aug. 12, was assigned to Micron Technology Inc. (Boise, Idaho).

"Low stress refresh erase in a memory device" was invented by Ronit Roneel Prakash (Kanagawa Prefecture, Japan), Pitamber Shukla (Boise, Idaho), Ching-Huang Lu (Fremont, Calif.), Murong Lang (San Jose, Calif.) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device can include a memory device coupled with a processing device. The processing device causes a first erase operation to be performed at a block, where the first erase operation causes a pre-program voltage and a first erase voltage having a first magnitude to be applied ...