US Patent Issued to Micron Technology on Aug. 12 for "Double single level cell program in a memory device" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,790, issued on Aug. 12, was assigned to Micron Technology Inc. (Boise, Idaho).

"Double single level cell program in a memory device" was invented by Tomoko Ogura Iwasaki (San Jose, Calif.), Eric N. Lee (San Jose, Calif.) and June Lee (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device causes a pass voltage to be applied to a plurality of wordlines of a block of a memory array of the memory device, the block comprising a plurality of sub-blocks, and the pass voltage to boost a channel potential of each of the plurality of sub-blocks to a boost voltage. The control logic further selectively discharges the...