ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,702, issued on Aug. 12, was assigned to Micron Technology Inc. (Boise, Idaho).

"Adaptive error recovery when program status failure occurs in a memory device" was invented by Kyungjin Kim (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system and method for detecting a failure of a set of memory cells in a memory device, determining a recovery indicator associated the failure, the recovery indicator corresponding to a subset of cells of the set of memory cells, and the subset of cells having a threshold voltage above a read level, where the read level corresponds to a per-cell memory density of the plurality of cells of the memory...