ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,051, issued on April 8, was assigned to Micron Technology Inc. (Boise, Idaho).
"Metal gate memory device and method" was invented by Hyucksoo Yang (Meridian, Idaho), Jongpyo Kim (Boise, Idaho) and Byung Yoon Kim (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include an array of memory cells and a transistor located on a periphery of the array of memory cells. A number of data lines are shown coupled to memory cells in the array, wherein the number of data lines extend over a first metal gate of a transistor in the peri...