US Patent Issued to Micron Technology on April 8 for "Memory array and methods used in forming a memory array" (Idaho Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,056, issued on April 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory array and methods used in forming a memory array" was invented by Luan C. Tran (Meridian, Idaho), Guangyu Huang (Boise, Idaho) and Haitao Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array, comprises forming a substrate comprising a conductive tier, an insulator etch-stop tier above the conductive tier, a select gate tier above the insulator etch-stop tier, and a stack comprising vertically-alternating insulative tiers and wordline tiers above the select gate tier. Etching is conducted through the insulative ti...