ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,636, issued on April 22, was assigned to Micron Technology Inc. (Boise, Idaho).
"Devices including channel materials and passivation materials" was invented by Kamal M. Karda (Boise, Idaho) and Haitao Liu (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device comprises a conductive line and a transistor adjacent to the conductive line. The transistor comprises a channel material extending into the conductive line, the channel material contacting the conductive line in three dimensions, a dielectric material adjacent to the channel material, a conductive material adjacent to the dielectric material, and a passivation mat...