US Patent Issued to Micron Technology on April 15 for "Source line configuration for a memory device" (California Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,972, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Source line configuration for a memory device" was invented by Richard E. Fackenthal (Carmichael, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for source line configurations for a memory device are described. In some cases, a memory cell of the memory device may include a first transistor having a floating gate for storing a logic state of the memory cell and a second transistor coupled with the floating gate of the first transistor. The memory cell may be coupled with a word line, a digit line, and a source line. During a write ope...