US Patent Issued to Micron Technology on April 15 for "Semiconductor devices comprising carbon-doped silicon nitride and related methods" (Idaho Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,423, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor devices comprising carbon-doped silicon nitride and related methods" was invented by Jun Fang (Boise, Idaho), Fei Wang (Boise, Idaho), Saniya Rathod (Boise, Idaho), Rutuparna Narulkar (Boise, Idaho), Matthew Park (Boise, Idaho) and Matthew J. King (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure that comprises tiers of alternating dielectric levels and conductive levels and a carbon-doped silicon nitride over the tiers of the staircase structure. The carbon-doped silicon nitride excludes silicon carbon nitride. A...