US Patent Issued to Micron Technology on April 15 for "NAND structures with polarized materials" (Italian, American Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,434, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"NAND structures with polarized materials" was invented by Albert Fayrushin (Boise, Idaho), Kamal Karda (Boise, Idaho), Gianpietro Carnevale (Bottanuco, Italy) and Aurelio Giancarlo Mauri (Meda, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for NAND structures with polarized materials are described. A memory device may include a polarized dielectric material located relatively near to a channel, which may reduce interference between cells. The polarized dielectric material may include a dielectric material with a fixed polarity and hav...