ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,056, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).
"Memory device interface and method" was invented by Brent Keeth (Boise, Idaho), Owen Fay (Meridian, Idaho), Chan H. Yoo (Boise, Idaho), Roy E. Greeff (Boise, Idaho) and Matthew B. Leslie (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configure...