US Patent Issued to Micron Technology on April 15 for "Memory device and method for operating the same including setting a recovery voltage" (Italian Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,967, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device and method for operating the same including setting a recovery voltage" was invented by Marco Sforzin (Cernusco sul Naviglio, Italy), Paolo Amato (Treviglio, Italy) and Innocenzo Tortorelli (Cernusco sul Naviglio, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device can include a plurality of memory cells including a first group of memory cells and a second group of memory cells programmed to a predefined logic state. The plurality of memory cells includes a memory controller configured to apply a reading voltage to at least one selected mem...