US Patent Issued to Micron Technology on April 15 for "Memory array comprising strings of memory cells and conductive gate lines of different vertical thicknesses" (Idaho Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,973, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory array comprising strings of memory cells and conductive gate lines of different vertical thicknesses" was invented by John D. Hopkins (Meridian, Idaho) and Alyssa N. Scarbrough (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising laterally-spaced memory-block regions having horizontally-elongated trenches there-between. Two of the first tiers have different vertical thicknesses relati...