US Patent Issued to Micron Technology on April 15 for "High voltage isolation devices for semiconductor devices" (Idaho Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,286, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"High voltage isolation devices for semiconductor devices" was invented by Michael A. Smith (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "High voltage isolation devices for semiconductor devices and associated systems, are disclosed herein. The isolation device may support operations of a 3-dimensional NAND memory array of the semiconductor device. In some embodiments, during high voltage operations (e.g., erase operations), the isolation device may provide a high voltage to the memory array while isolating other circuitry supporting low voltage operations ...