US Patent Issued to Micron Technology on April 15 for "Epitaxial single crystalline silicon growth for a horizontal access device" (Idaho Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,410, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Epitaxial single crystalline silicon growth for a horizontal access device" was invented by Armin Saeedi Vahdat (Boise, Idaho), Gurtej S. Sandhu (Boise, Idaho), Scott E. Sills (Boise, Idaho), Si-Woo Lee (Boise, Idaho) and John A. Smythe III (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and apparatuses are provided for epitaxial single crystalline silicon growth for a horizontal access device. One example method includes depositing layers of a first dielectric material, a semiconductor material, and a second dielectric material to form a v...