US Patent Issued to Micron Technology on April 15 for "Apparatuses including and methods for memory subword driver circuits with reduced gate induced drain leakage" (Japanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,986, issued on April 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatuses including and methods for memory subword driver circuits with reduced gate induced drain leakage" was invented by Kenji Asaki (Sagamihara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses including and methods for memory subword driver circuits with reduced gate induced drain leakage are described. An example apparatus includes a first subword line and a second subword line coupled to the first subword line by a first common transistor where, in response to a test mode signal, a voltage of each of the first and second subword lines is raised t...