US Patent Issued to Micron Technolgy on July 8 for "Charge loss mitigation throughout memory device lifecycle by proactive window shift" (Colorado, Idaho, California Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,353,771, issued on July 8, was assigned to Micron Technolgy Inc. (Boise, Idaho).

"Charge loss mitigation throughout memory device lifecycle by proactive window shift" was invented by Steven Michael Kientz (Westminster, Colo.), Ugo Russo (Boise, Idaho) and Vamsi Pavan Rayaprolu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more trim values associated with a set of blocks of a memory device are set according to a representative number of program erase cycles (PECs) for the set of blocks. Each block in the set of blocks was programmed within at least one of a specified time window or a specified temperature range. Responsive to exe...