US Patent Issued to Microchip Technology on March 11 for "Method of forming an integrated circuit structure including a resistive random access memory (RRAM) cell" (Washington Inventor)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,891, issued on March 11, was assigned to Microchip Technology Inc. (Chandler, Ariz.).

"Method of forming an integrated circuit structure including a resistive random access memory (RRAM) cell" was invented by Yaojian Leng (Vancouver, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Resistive random access memory (RRAM) cells, for example conductive bridging random access memory (CBRAM) cells and oxygen vacancy-based RRAM (OxRRAM) cells are provided. An RRAM cell may include a metal-insulator-metal (MIM) structure formed between adjacent metal interconnect layers or between a silicided active layer (e.g., including MOSFET devices) and a first me...