US Patent Issued to MI2-FACTORY on July 22 for "Method for producing semiconductor components, and semiconductor component" (German Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,047, issued on July 22, was assigned to MI2-FACTORY GMBH (Jena, Germany).

"Method for producing semiconductor components, and semiconductor component" was invented by Constantin Csato (Stammbach, Germany) and Florian Krippendorf (Jena, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for the production of semiconductor components with a vertical structure includes the step of providing a substrate of semiconductor material with a thickness of 4 micro metre to 300 micro metre. Then a doped drift zone of the semiconductor component is produced by ion implantation in the substrate using an energy filter, wherein the energy filter is a mi...