US Patent Issued to mi2-factory on Dec. 9 for "Ion implantation device comprising energy filter and additional heating element" (German Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,337, issued on Dec. 9, was assigned to mi2-factory GmbH (Jena, Germany).

"Ion implantation device comprising energy filter and additional heating element" was invented by Florian Krippendorf (Jena, Germany) and Constantin Csato (Jena, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25)."

The patent was filed on May 14, 2021, under Application No. 17/925,348.

*For f...