US Patent Issued to MI2-FACTORY on April 1 for "Energy filter for use in the implantation of ions into a substrate" (German Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,499, issued on April 1, was assigned to MI2-FACTORY GMBH (Jena, Germany).

"Energy filter for use in the implantation of ions into a substrate" was invented by Constantin Csato (Stammbach, Germany) and Florian Krippendorf (Jena, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The energy filter for use in the implantation of ions into a substrate is micropatterned for establishing, in the substrate, a dopant depth profile and/or defect depth profile brought about by the implantation, and has two or more layers or layer sections which are arranged one after another in the height direction of the energy filter. The energy filter also has a plural...